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Publication history Received28 June 2010Revised17 respectable 2010Published online31 respectable 2010Published inissue 13 October 2010

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105), fast switching (sub-100-ns), and great endurance (104 write-erase cycles). This properties in a SiOx-based material composition showcase that is potentials in building memory or logi"}" class="meta-data"/>
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Because of its terrific dielectric properties, silicon oxide (SiOx) has actually long been used and also considered as a passive, insulating component in the construction of digital devices. In contrast, here we demonstrate resistive switches and also memories that use SiOx together the sole active material and also can be applied in totally metal-free embodiments. With cross-sectional transmission electron microscopy, we identify that the switching takes place through the voltage-driven development and change of silicon (Si) nanocrystals (NCs) installed in the SiOx matrix, with SiOx itself additionally serving as the source of the development of this Si pathway. The little sizes that the Si NCs (d ∼ 5 nm) imply that scaling to ultrasmall domains can be feasible. Meanwhile, the switch additionally shows durable nonvolatile properties, high ON/OFF ratios (>105), quick switching (sub-100-ns), and an excellent endurance (104 write-erase cycles). This properties in a SiOx-based product composition showcase its potentials in creating memory or logic devices that are fully CMOS compatible.